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Journal Articles

Alignment of optical devices and the plan to install a BPM in the terminal

Asozu, Takuhiro; Matsuda, Makoto; Otokawa, Yoshinori

JAEA-Conf 2008-012, p.91 - 94, 2009/03

no abstracts in English

Journal Articles

Present status of JAEA-Tokai Tandem Accelerator

Matsuda, Makoto; Sataka, Masao; Tsukihashi, Yoshihiro; Hanashima, Susumu; Abe, Shinichi; Osa, Akihiko; Ishizaki, Nobuhiro; Nakanoya, Takamitsu; Kabumoto, Hiroshi; Nakamura, Masahiko; et al.

JAEA-Conf 2008-012, p.39 - 43, 2009/03

no abstracts in English

Journal Articles

Estimation of diffusion length by using heavy ion microbeam

Onoda, Shinobu; Iwamoto, Naoya; Hirao, Toshio; Oshima, Takeshi; Kawano, Katsuyasu*

JAEA-Conf 2008-012, p.146 - 149, 2009/03

no abstracts in English

Journal Articles

Development of a ion beam intensity distribution monitor for the TIARA 400kV ion implanter

Yamada, Keisuke; Agematsu, Takashi; Mizuhashi, Kiyoshi

JAEA-Conf 2008-012, p.134 - 137, 2009/03

no abstracts in English

Journal Articles

Beam emittance measurement of the RF ion source installed in the single-ended accelerator

Yokoyama, Akihito; Ishii, Yasuyuki; Chiba, Atsuya; Uno, Sadanori; Agematsu, Takashi; Takayama, Terumitsu*; Koka, Masashi*; Mizuhashi, Kiyoshi

JAEA-Conf 2008-012, p.138 - 141, 2009/03

no abstracts in English

Journal Articles

$$alpha$$-ray irradiation of organic extractants for the separation of minor actinides by the tandem accelerator

Sugo, Yumi; Akamatsu, Ken; Hase, Yoshihiro; Taguchi, Mitsumasa; Sasaki, Yuji; Hirota, Koichi; Kimura, Takaumi

JAEA-Conf 2008-012, p.127 - 129, 2009/03

no abstracts in English

Journal Articles

Developments for reduction of beam energy spread and formation of a few hundreds MeV class heavy-ion microbeam at a cyclotron

Kurashima, Satoshi; Miyawaki, Nobumasa; Oikawa, Masakazu*; Sato, Takahiro; Yoshida, Kenichi; Kashiwagi, Hirotsugu; Okumura, Susumu; Fukuda, Mitsuhiro*; Kamiya, Tomihiro; Yokota, Wataru

JAEA-Conf 2008-012, p.48 - 50, 2009/03

no abstracts in English

Journal Articles

Current status of electrostatic accelerators at TIARA

Uno, Sadanori; Chiba, Atsuya; Yamada, Keisuke; Yokoyama, Akihito; Agematsu, Takashi; Mizuhashi, Kiyoshi; Kitano, Toshihiko*; Takayama, Terumitsu*; Orimo, Takao*; Koka, Masashi*; et al.

JAEA-Conf 2008-012, p.44 - 47, 2009/03

no abstracts in English

Journal Articles

Investigation of charge exchange gases for cluster ion acceleration

Saito, Yuichi; Chiba, Atsuya; Narumi, Kazumasa; Takahashi, Yasuyuki

JAEA-Conf 2008-012, p.130 - 133, 2009/03

no abstracts in English

Journal Articles

Average charge and its projectile orientation dependence of fragment ions passing through a thin foil with a swift carbon cluster

Chiba, Atsuya; Saito, Yuichi; Narumi, Kazumasa; Adachi, Masahiro; Yamada, Keisuke; Takahashi, Yasuyuki; Kaneko, Toshiaki*

JAEA-Conf 2008-012, p.84 - 86, 2009/03

no abstracts in English

Oral presentation

Present status of the JAEA-AMS-TONO

Suzuki, Mototaka; Nishizawa, Akimitsu*; Owaki, Yoshio*; Nishio, Tomohiro*; Saito, Tatsuo; Ishimaru, Tsuneari

no journal, , 

JAEA-AMS-TONO, tandem AMS(NEC 15SDH-2 PELLETRON) was introduced for analization of natural samples of rocks or underwaters. We report present status of the JAEA-AMS-TONO, maintenance and inprovement since last July.

Oral presentation

Investigation of radiation hardness of III-V compound thin film double junction solar cell

Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi; Kawakita, Shiro*; Kibe, Koichi*

no journal, , 

no abstracts in English

Oral presentation

Three-dimensional writing with ion microbeam

Takano, Katsuyoshi; Sato, Takahiro; Ishii, Yasuyuki; Kamiya, Tomihiro; Okubo, Takeru; Sugimoto, Masaki

no journal, , 

Three dimensional micromachining with proton beam writing has been developed at Japan Atomic Energy Agency (JAEA) Takasaki. For SU-8 negative-type photoresist films which is one of the candidate for the target, the proton microbeam writing with the incidence energy 3 MeV was performed to change the fluency from 0.03 to 0.27 $$mu$$C/mm$$^2$$. The use of the proton microbeam writing that the fluency is adjusted to 0.07$$mu$$C/mm$$^2$$ enables to fabricate the range of 550 $$times$$ 550 $$mu$$m$$^2$$ by the resolution of 1 $$mu$$m vertically against the incidence direction.

Oral presentation

Relation between transient current induced in MOS devices by heavy ions and total dose effects

Imagawa, Ryo*; Fugane, Masaru*; Takahashi, Yoshihiro*; Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Heavy-ion induced current in MOS devices

Hirao, Toshio; Onoda, Shinobu; Oshima, Takeshi; Takahashi, Yoshihiro*

no journal, , 

no abstracts in English

15 (Records 1-15 displayed on this page)
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